By Ivan A. Parinov
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Additional resources for Advanced Nano- and Piezoelectric Materials and Their Applications
021 μm/h. By assuming that each electron, injected into the oxide at the initial stage of growth (x 0), will participate in the oxygen ionization and n0 x CO 1016 cm3 [30, 45], the probability is 2 n 1. With growth of the oxide, according to Reference , the potential barrier Ep at the interface increases and the concentration of electrons in the oxide decreases. By using these suggestions, we can submit the schedule for growth of silicon dioxide at the temperature of 1173 K (see Figure 5) In the case of using short-wavelength light sources the model can be complicated, if we take into account the dissociation of molecular oxygen in the gas phase volume.
V. e. radiation sources. By means of varying their parameters we can change the photo-stimulated reaction occurring, achieving the desired growth rate and acceptable parameters of forming dielectric . The possibility of the oxidation temperature reducing makes rapid thermal annealing method really promising for use in low-temperature technology of modern integrated circuits and microsystem fabrication. To improve CMOS VLSI performance we need gate dielectric with a required thickness of 5 10 nm.
It is wellknown, however [87, 91], that during thermal chemical deposition, some of the silicon organic compounds (for example, Tetraethoxysilane (TEOS - Si(OC2H5)4) can provide SiO2 layers, demonstrating electrical and physical properties with high conformability and uniformity.
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